Defects in SiO2 and Related Dielectrics: Science and Technology

Defects in SiO2 and Related Dielectrics: Science and Technology

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Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000Science and Technology ; [proceedings of the NATO Advanced Study Institute on Defects in SiO 2 and Related ... is very high and the corresponding computed lifetime, t = 5.5 ns, is in excellent agreement with the measured ones t alt; 10 ns [70 ] or x alt; 4 ns [71]. For =Ge: and =Sn: the agreement between theory and experiment for the Si -agt; So decay is less satisfactory [66]. In fact ... extremely good and the assignment originally proposed by Skuja [67] is fully supported by the calculations.


Title:Defects in SiO2 and Related Dielectrics: Science and Technology
Author: Gianfranco Pacchioni, Linards Skuja, David Griscom
Publisher:Springer Science & Business Media - 2000-12-31
ISBN-13:

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