Nonvolatile semiconductor memories
Tsutomu Yoshihara LSI Raamp;D Laboratory, Mitsubishi Electric Corporation Itami, Japan Reprinted from the IEEE ISSCC Dig. ... Therefore, a memory cell with high current drive, improved differential sensing technique, and error correcting code ( ECC) was developed. ... which has been charged through the memory transistor in the erase cycle, preventing destruction of the latched data when DLp goes high.
| Title | : | Nonvolatile semiconductor memories |
| Author | : | Chenming Hu |
| Publisher | : | IEEE - 1991-04 |
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